EARLY TRANSISTOR HISTORY AT RCA

Archer Mohr

 

Oral History – Arch Mohr

(Continued)

 

Initial contract effort was concentrated on the design and sample production of the ge. types while silicon production processes were being developed in the Somerville Advanced Dev. Group.  The first process developed was used to make the required pre-production samples. This process was considered not very reproducible because of the difficulty in making the first samples. A second process developed in Ad. Dev. by Loran Armstrong proved to be superior to the 1st method and all subsequent samples needed to complete the contract were made with this process.  After completion of the contract, RCA moved immediately into production of all 5 types.  Two transistor types that resulted from the contract were the 2N3054 and 2N3055.  This silicon transistor process eventually became known as the RCA "homotaxial" process. Geometry modifications of the silicon "chip" led to a large number of announced silicon power transistors. 

 

Silicon power transistors manufactured by the homotaxial process were very competitive with other silicon transistors of that time.  They had output characteristics similar to ge. power transistors, and had the advantage of higher temperature ratings.  Marketing demands for these silicon units led to the construction of the RCA Mountaintop, PA plant in 1960.  I was named production engineering manager of the new plant.  At that point my career changed from design & development engineering to production management which lasted until I retired in 1981.

 

 

Oral History – Arch Mohr

(Continued)

 

I would like to mention some of the manufacturing improvements that occurred in the 20 years I was involved in manufacturing.  Our initial silicon transistors were made from 3/4 inch wafers.  When I retired, 4 inch wafers were in production.  The Mountaintop plant (now Intersil) has 8 inch capability.  Diffusion furnaces had only on-off controllers and very limited constant temperature zone. Furnaces now have proportional controllers with long constant temp. zone.  Geometry chip patterns on our first transistors were made by a silk screen process.  Photolithography and photo resist techniques are now used with much improved tolerances.  While I was still with RCA, these improvements along with process improvements, reduced the cost of the active chip to the point that packaging (case) became a significant part of the total cost of the transistor.  This led to the development of other packaging designs including the RCA "versawatt" package.   

 

______________

 

 

 

COPYRIGHT © 2001 by Jack Ward.  All Rights Reserved.  http://www.transistormuseum.com/

PAGE 2